| 摘要 |
<p>[Objectives] First, a semiconductor device having favorable properties will be produced. Second, the occurrence of cracks in a porous layer formed on the substrate of a semiconductor device will be suppressed, to realize a high performance semiconductor device, even if it has a large area. Third, the adhesion properties of a porous layer formed on a resin substrate will be improved, to suppress separation of the resin substrate and the porous layer. [Constitution] A semiconductor device is provided with a porous structure layer (4) formed by silicone resin between a substrate (2) and a semiconductor element (3). Alternatively, a porous layer (24) having a density of 0.7g/cm 3 or less, formed by a compound obtained by hydrolyzing and condensing at least one type of alkoxysilane selected from a group consisting of monoalkoxysilane, dialkoxysilane, and trialkoxysilane, and tetraalkoxysilane is provided between a substrate (22) and a semiconductor element (23) of a semiconductor device (21). As a further alternative, an adhesion layer (33) formed by a compound obtained by hydrolyzing and condensing an alkoxysilane is provided on a resin substrate (32), and a porous layer (34) having a density of 0.7g/cm 3 or less, formed by a compound obtained by hydrolyzing and condensing an alkoxysilane, is provided on the adhesion layer (33).</p> |
