发明名称 |
METHOD OF FORMING ION EMITTER FOR LASER DESORPTION-IONISATION OF CHEMICAL COMPOUNDS |
摘要 |
FIELD: chemistry. ^ SUBSTANCE: in the method of forming an ion emitter for laser desorption-ionisation of chemical compounds through processing semiconductor materials, the latter is carried out by exposing the surface of semiconductor material to a stream of pulsed laser radiation with intensity greater than the melting threshold of the used material, which ensures the material melts at a depth of not less than 5 nm. The processed semiconductor material re-exposed to electromagnetic radiation with intensity less than the melting threshold of the used material in the presence of vapour of an ion-donor reagent. ^ EFFECT: high accuracy of analysis and low limits for detecting defined compounds, possibility of repeated use of the formed ion emitter. ^ 8 cl, 5 dwg |
申请公布号 |
RU2426191(C1) |
申请公布日期 |
2011.08.10 |
申请号 |
RU20100121208 |
申请日期 |
2010.05.26 |
申请人 |
ROSSIJSKAJA FEDERATSIJA OT IMENI KOTOROJ VYSTUPAET MINISTERSTVO OBRAZOVANIJA I NAUKI ROSSIJSKOJ FEDERATSII;OBSHCHESTVO S OGRANICHENNOJ OTVETSTVENNOST'JU "NOVYE EHNERGETICHESKIE TEKHNOLOGII" |
发明人 |
GRECHNIKOV ALEKSANDR ANATOL'EVICH;ALIMPIEV SERGEJ SERGEEVICH;NIKIFOROV SERGEJ MIKHAJLOVICH;SIMANOVSKIJ JAROSLAV OLEGOVICH |
分类号 |
B82B3/00;H01L21/268 |
主分类号 |
B82B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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