发明名称 |
Semiconductor memory device, method of manufacturing the same, and method of screening the same |
摘要 |
A memory cell comprises a variable resistance film; a first conductive film having one surface contacted with one surface of the variable resistance film; and a second conductive film having one surface contacted with another surface of the variable resistance film. A width of the first conductive film or the second conductive film in a direction orthogonal to a direction that a current flows in the first conductive film or the second conductive film is smaller than a width of the variable resistance film in a direction orthogonal to a direction that a current flows in the variable resistance film. The width of the first conductive film and the second conductive film is smaller than a width of the first line and the second line in a direction orthogonal to a direction that a current flows in the first line and the second line.
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申请公布号 |
US7995374(B2) |
申请公布日期 |
2011.08.09 |
申请号 |
US20090618122 |
申请日期 |
2009.11.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOMURA MASANORI;SATO MITSURU;MUROOKA KENICHI;KISHIDA MOTOYA |
分类号 |
G11C11/00;G11C11/36;G11C17/00;G11C29/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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