发明名称 Organic thin film transistors
摘要 An organic thin film transistor has a gate dielectric layer which is formed from a block copolymer. The block copolymer comprises a polar block and a nonpolar block. The resulting dielectric layer has good adhesion to the gate electrode and good compatibility with the semiconducting layer.
申请公布号 US7994495(B2) 申请公布日期 2011.08.09
申请号 US20080014884 申请日期 2008.01.16
申请人 XEROX CORPORATION 发明人 WU YILIANG;ONG BENG S.
分类号 H01L51/30 主分类号 H01L51/30
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