发明名称 PREVENTING UNINTENDED PERMANENT WRITE-PROTECTION IN NONVOLATILE MEMORY
摘要 An input voltage range may be established between different voltage levels used for different programming functions of an integrated circuit device, thus implementing a protection zone (“safe zone”) of non-operation to facilitate prevention of an unintended irreversible programming operation, e.g., permanent write protection.
申请公布号 KR20110089813(A) 申请公布日期 2011.08.09
申请号 KR20107028976 申请日期 2009.10.27
申请人 MICROCHIP TECHNOLOGY INC. 发明人 MIETUS DAVID FRANCIS;BEAUCHAMP BRUCE EDWARD;ALEXANDER SAMUEL;ABERRA EZANA H.
分类号 G11C16/22;G11C16/10 主分类号 G11C16/22
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