发明名称 |
Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy |
摘要 |
An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.
|
申请公布号 |
US7994596(B2) |
申请公布日期 |
2011.08.09 |
申请号 |
US20060515533 |
申请日期 |
2006.09.05 |
申请人 |
HEADWAY TECHNOLOGIES, INC. |
发明人 |
MIN TAI;HORNG CHENG;WANG PO KANG |
分类号 |
H01L27/105;H01L29/82;G11C11/14;G11C11/15;G11C11/16;H01L21/8246;H01L27/22;H01L31/062;H01L43/08;H01L43/10;H01L43/12 |
主分类号 |
H01L27/105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|