发明名称 Light emitting device and manufacturing method thereof
摘要 An active matrix light emitting device of which luminance characteristic does not vary among light emitting elements of respective pixels, and which can be realized even in a high definition display panel is disclosed. In the light emitting device, a light emitting material is interposed between a first electrode and a second electrode electrically connected to an auxiliary wiring, not only in a peripheral portion but also in a pixel portion. A layer containing the light emitting material comprises a first buffer layer, a light emitting layer, and a second buffer layer. In the pixel portion, either one or both of the first and the second buffer layer are interposed between the auxiliary wiring and the second electrode where the second electrode and the auxiliary wiring are electrically connected.
申请公布号 US7994711(B2) 申请公布日期 2011.08.09
申请号 US20060462307 申请日期 2006.08.03
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 NAKAMURA YASUO;SHIBATA NORIKO
分类号 H01L29/201 主分类号 H01L29/201
代理机构 代理人
主权项
地址