Metal-gated MOSFET devices having scaled gate stack thickness including gettering species in a buried oxide

摘要

Metal-oxide semiconductor field effect transistor (MOSFET) devices having metal gate stacks and techniques for improving performance thereof are provided. In one aspect, a metal-oxide semiconductor device is provided comprising a substrate having a buried oxide layer at least a portion of which is configured to serve as a primary background oxygen getterer of the device; and a gate stack separated from the substrate by an interfacial oxide layer. The gate stack comprises a high-K layer over the interfacial oxide layer; and a metal gate layer over the high-K layer.