| 摘要 |
PURPOSE: A semiconductor device manufacturing method and a film for the same are provided to make a film for semiconductor device manufacturing which is superior in avoiding contamination. CONSTITUTION: A film(1) for semiconductor device manufacturing is comprised of a substrate layer, a first adhesive layer, a second adhesive layer, and an adhesive layer. The first adhesive layer(12) is formed on the substrate layer(11). The second adhesive layer(13) of a radiation hardening type is formed on the first adhesive layer and is hardened in advance by projection of the radiation. The adhesive layer(14) is formed on the second adhesive layer.
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