| 摘要 |
A method includes providing a substrate including a non-insulative, silicon-including region for silicidation, the substrate including one or more contaminants at a top surface thereof. A getter layer is deposited over the non-insulative, silicon-including region, the getter layer reacting with at least one of the one or more contaminants in the non-insulative, silicon-including region at approximately room temperature. The getter layer is removed, and siliciding of the non-insulative, silicon-including region is performed.
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