发明名称 |
Non-volatile memory cells formed in back-end-of line processes |
摘要 |
An integrated circuit device includes a substrate; a bottom electrode over the substrate wherein the bottom electrode is in or over a lowest metallization layer over the substrate; a blocking layer over the bottom electrode; a charge-trapping layer over the blocking layer; an insulation layer over the charge-trapping layer; a control gate over the insulation layer; a tunneling layer over the control gate; and a top electrode over the tunneling layer.
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申请公布号 |
US7994564(B2) |
申请公布日期 |
2011.08.09 |
申请号 |
US20060602065 |
申请日期 |
2006.11.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG SHIH WEI |
分类号 |
H01L29/788;H01L21/8246;H01L21/8247 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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