发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
It is an object of the present invention to provide a semiconductor device mounted with a memory which can be driven in the ranges of a current value and a voltage value which can be generated from a wireless signal. It is another object to provide a write-once read-many memory into which data can be written anytime after manufacture of a semiconductor device. An antenna, an antifuse-type ROM, and a driver circuit are formed over a substrate having an insulating surface. A stacked layer of a silicon film and a germanium film is interposed between a pair of electrodes included in the antifuse-type ROM. The antifuse-type ROM having this stacked layer can reduce fluctuation in writing voltage.
|
申请公布号 |
US7994607(B2) |
申请公布日期 |
2011.08.09 |
申请号 |
US20080010795 |
申请日期 |
2008.01.30 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TOKUNAGA HAJIME;TAJIMA RYOTA |
分类号 |
H01L23/525 |
主分类号 |
H01L23/525 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|