发明名称 Semiconductor device and manufacturing method thereof
摘要 It is an object of the present invention to provide a semiconductor device mounted with a memory which can be driven in the ranges of a current value and a voltage value which can be generated from a wireless signal. It is another object to provide a write-once read-many memory into which data can be written anytime after manufacture of a semiconductor device. An antenna, an antifuse-type ROM, and a driver circuit are formed over a substrate having an insulating surface. A stacked layer of a silicon film and a germanium film is interposed between a pair of electrodes included in the antifuse-type ROM. The antifuse-type ROM having this stacked layer can reduce fluctuation in writing voltage.
申请公布号 US7994607(B2) 申请公布日期 2011.08.09
申请号 US20080010795 申请日期 2008.01.30
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TOKUNAGA HAJIME;TAJIMA RYOTA
分类号 H01L23/525 主分类号 H01L23/525
代理机构 代理人
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