发明名称 Sidewall graphene devices for 3-D electronics
摘要 A device is provided that includes a structure having a sidewall surface, a layer of material provided on the sidewall surface, and a device structure provided in contact with the layer of material. Fabrication techniques includes a process that includes forming a structure having a sidewall surface, forming a layer of material on the sidewall surface, and forming a device structure in contact with the layer of material, where the device structure and the layer of material are components of a device.
申请公布号 US7993986(B2) 申请公布日期 2011.08.09
申请号 US20080202011 申请日期 2008.08.29
申请人 ADVANCED MICRO DEVICES, INC. 发明人 CHEN AN;KRIVOKAPIC ZORAN
分类号 H01L21/335 主分类号 H01L21/335
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