NONVOLATILE MEMORY DEVICE AND READ METHOD THEREOF

摘要

PURPOSE: A non-volatile memory device and a method of reading thereof are provided to prevent the extension of threshold voltage distribution of a memory cell through the noise voltage of a common source line. CONSTITUTION: In a non-volatile memory device and a method of reading thereof, a plurality of memory cells are serially connected between a bit line and a common source line. A plurality of word lines is respectively connected to the gate of a plurality of memory cells. A common source line voltage sensor is connected to the common source line. The common source line voltage sensor senses a common source line voltage. A common source line compensation logic(170) adjusts a detected common source line voltage. The common source line compensation logic varies the voltage supplied to the bit line or the word lines.