| 摘要 |
<p>PURPOSE: An extreme ultra violet mask and a formation method thereof are provided to modify a structure of an extreme ultra violet mask, thereby increasing resolution power by improving mask reflectivity and simplifying a mask manufacturing process. CONSTITUTION: An extreme ultra violet(EUV) mask includes a quartz substrate, a multilayered membrane(115), and a structure pattern. The multilayered membrane is formed on the upper part of the quartz substrate. The structure pattern is included between layers of the multilayered membrane. The multilayered membrane includes molybdenum(105) and silicon(110). The structure pattern is comprised of an insulating layer.</p> |
