| 摘要 |
PURPOSE: A semiconductor light emitting device with an electrode pattern is provided to control the generation of heat inside a semiconductor light emitting device without the elimination of a part of the semiconductor light emitting device and maintain a valid radiation area by not removing an active layer area in which the direct reaction of holes and electronics occurs. CONSTITUTION: A first nitride semiconductor layer(120), an active layer(130), a second nitride semiconductor layer(140), and a transparent electrode(150) are successively laminated in a substrate. A pair of first electrodes(160) is electrically touched with the first nitride semiconductor layer. A pair of second electrodes(170) is formed on the transparent electrode. The first electrode and the second electrode comprises a main electrode, which is parallel to one side edge of the transparent electrode, the first side end and the second side end of the main electrode, a first side end branch, which is perpendicularly projected to the same direction from the middle of the main electrode, a second side end branch, and a middle branch. The second side end branch comprises a horizontal part, which is connected to the outer part from the end of the vertical part, to be parallel with the vertical part and the main electrode which is perpendicularity to the main electrode.
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