| 摘要 |
<p>#CMT# #/CMT# The sensor (100) has photodiodes (112) and complementary metal-oxide semiconductor transistors (114) formed in a semi-conductor layer (110). Electrical interconnection layers (122a, 122b) are formed in a dielectric layer (116) and connected to the photodiodes and/or transistors. The dielectric layer is placed against a surface of the semi-conductor layer. The light received by the sensor is entered through another surface of the semi-conductor layer. A light reflection unit is placed in the dielectric layer, and reflects a part of light from the sensor to the photodiodes. #CMT# : #/CMT# An independent claim is also included for a method for forming an image sensor. #CMT#USE : #/CMT# Image sensor e.g. back-side or front-side type complementary metal-oxide semiconductor, for a portable telephone and web camera. #CMT#ADVANTAGE : #/CMT# The light reflection unit improves absorption of photons in the semi-conductor layer and photon conversion efficiency, thus facilitating reduction of thickness of the semi-conductor layer by only modifying electrical interconnection zones, without modifying structure of the sensor. The reduction of semi-conductor layer thickness limits electronic crosstalk, and improves the collection of charges generated by absorption of photons. The dielectric layer is placed in contact with a surface of the semi-conductor layer so as to limit the electronic impact on the image sensor. The sensor is economic. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic side view of an image sensor. 100 : Image sensor 110 : Semi-conductor layer 112 : Photodiodes 114 : Complementary metal-oxide semiconductor transistors 116 : Dielectric layer 122a, 122b : Electrical interconnection layers #CMT#INORGANIC CHEMISTRY : #/CMT# The reflection unit is also made of amorphous silicon and/or polycrystalline silicon. #CMT#METALLURGY : #/CMT# The reflection unit is made of aluminum, copper and/or chromium.</p> |
