发明名称 |
GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH MULTIPLE QUANTUM WELL STRUCTURES HAVING VARYING WELL THICKNESSES |
摘要 |
A Group III nitride based light emitting diode includes a p-type Group III nitride based semiconductor layer, an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer, and a Group III nitride based active region on the n-type Group III nitride based semiconductor layer. The active region includes a plurality of sequentially stacked Group III nitride based wells including respective well layers. The plurality of well layers includes a first well layer having a first thickness and a second well layer having a second thickness. The second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness.
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申请公布号 |
US2011187294(A1) |
申请公布日期 |
2011.08.04 |
申请号 |
US20100699541 |
申请日期 |
2010.02.03 |
申请人 |
BERGMANN MICHAEL JOHN;DRISCOLL DANIEL CARLETON;CHAVAN ASHONITA;CANTU-ALEJANDRO PABLO;IBBETSON JAMES |
发明人 |
BERGMANN MICHAEL JOHN;DRISCOLL DANIEL CARLETON;CHAVAN ASHONITA;CANTU-ALEJANDRO PABLO;IBBETSON JAMES |
分类号 |
H05B41/00;H01L33/06;H01L33/30 |
主分类号 |
H05B41/00 |
代理机构 |
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