| 摘要 |
<p>Disclosed are either a germanium light emitting element that employs inexpensive SOI wafers available on the open market in direct transition and light emission; a germanium light emitting element comprising desirable light emitting qualities without applying significant length distortion upon a germanium single crystal; or a germanium light emitting element capable of reducing the threshold current for laser oscillation. The germanium light emitting element comprises either a thin film laser diode wherein a germanium layer, having an obverse face of either a (100) face, a (110) face, or a face orientation of equivalent crystallographic value thereto, is disposed upon an insulator body; or a thin film germanium fin as a light emitting unit that is formed vertically in the substrate direction. The light emitting unit is a germanium laser diode comprising one or more light emitting layers, which have the obverse face of either the (100) face, the (110) face, or the face orientation of equivalent crystallographic value thereto.</p> |
