| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To take in and exhaust a source gas uniformly on a large-area substrate, and to promptly remove higher-order silane generated in plasma space. <P>SOLUTION: A plasma CVD apparatus has a grounded electrode serving as a substrate-holding member and a first discharge electrode, arranged in position facing the grounded electrode inside a vacuum vessel, and the plasma CVD apparatus has a structure, such that the source gas is introduced into the vacuum vessel for plasma generation and a thin film is formed on the surface of the substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
