| 摘要 |
A semiconductor device may include, but is not limited to, a semiconductor substrate having a device isolation groove defining first to fourth device formation portions. The second device formation portion is separated from the first device formation portion. The third device formation portion extends from the first device formation portion. The third device formation portion is separated from the second device formation portion. The fourth device formation portion extends from the second device formation portion. The fourth device formation portion is separated from the first and third device formation portions. The third and fourth device formation portions are positioned between the first and second device formation portions.
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