SEMICONDUCTOR DEVICE

摘要

A protective diode (71) comprises a p-anode layer (21) and an n-cathode layer (22) which are alternately formed on a polysilicon layer, and comprises a pn-junction (74) which adopts a reverse blocking state when forward biased and every other one of which is short-circuited by a metal film (53). By connecting the protective diode (71) to a power semiconductor element (IGBT (72)), high breakdown resistance and reduced chip area can both be achieved at the same time, elevation of withstand voltage is suppressed even if a clamping voltage is repeatedly applied, and furthermore breakdown due to a negative surge voltage input to a gate terminal (G) can be prevented.