| 摘要 |
PURPOSE: A capacitor manufacturing method is provided to prevent not-open of open area and to improve profile of the open area in which a charge storage electrode is formed by forming a mold layer of multi-layered using the low-temperature oxide. CONSTITUTION: A multilayer mold layer is formed by alternately laminating a first mold layer and a second mold layer on the top of a substrate(21) in which a contact plug(23) is formed. The multilayer mold layer is annealed. Open area(28) is formed by etching the multilayer mold layer. A charge storage electrode is formed inside the open area.
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