VARIABLE RESISTANCE MEMORY, OPERATING METHOD THEREOF AND MEMORY SYSTEM INCLUDING THE SAME

摘要

PURPOSE: A variable resistance memory, an operating method thereof and a memory system including the same are provided to improve the operation speed of the device by performing writing on a set pulse which is narrower than a rest pulse. CONSTITUTION: In a variable resistance memory, an operating method thereof and a memory system including the same, a set pulse is applied to memory cells. The memory cells are written to be set status. A reset pulse is applied to the memory cells. The memory cells are written to be rest status. The width of a set pulse is narrower than the reset pulse.