| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To recover a damaged layer for a substrate with a decarbonized damaged layer and an oxide formed on respective exposed surfaces of a SiCOH film as a low dielectric constant film and Cu wiring and to reduce the oxide. <P>SOLUTION: H<SB>2</SB>gas and silicon-and-carbon-containing TMSDMA (N-Trimethylsilyldimethylamine) gas are continuously supplied to a wafer W with the decarbonized damaged layer 15 and the oxide/fluoride layer 16 formed on the respective exposed surfaces of the SiCOH-containing interlayer insulating film 4 and the Cu-containing wiring 2 in this order in the same treating container 51 to perform reduction treatment of the oxide/fluoride layer 16 and recovery treatment of the damaged layer 15. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
