| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-strength Cu-Ga-based sputtering target material for use in manufacturing a light-absorbing thin layer of a solar cell, which can be highly densified by preventing the powder from being melted in a molding process at high temperature, and to provide a method for manufacturing the same. SOLUTION: The high-strength Cu-Ga-based target material is a target material by powder metallurgy, which includes, by atom%, 29-40% Ga and the balance Cu with unavoidable impurities, wherein the peak intensity ratio in an X-ray diffraction spectrum of the (111) face of a fcc phase of a Cu base to the (330) face of a Cu9Ga4 phase satisfies 0.05≤Cu[I(111)]/Cu9Ga4[I(330)]≤0.80, in an X-ray diffraction analysis, the peak intensity ratio in an X-ray diffraction spectrum of the (102) face of a CuGa2 phase to the (330) face of the Cu9Ga4 phase satisfies CuGa2[I(102)]/Cu9Ga4[I(330)]≤0.10, and further the relative density is 95% or more. The method for manufacturing the same is also disclosed. COPYRIGHT: (C)2011,JPO&INPIT
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