| 摘要 |
PROBLEM TO BE SOLVED: To provide an inspection method capable of determining quality related to a dislocation defect of an SOI wafer before forming a semiconductor element on the SOI wafer. SOLUTION: Inspecting trenches 7, 7, ... reaching to an embedded oxide film 3 from a surface in a scribe region 6a of an SOI wafer 1 are formed on the SOI wafer 1; embedding materials 8, 8, ... each having a thermal expansion coefficient different from that of silicon are embedded in the inspecting trenches 7, 7, ...; the SOI wafer 1 is heated until reaching to a predetermined treatment temperature; dislocations 9, 9, ... appearing in parts around the inspecting trenches 7, 7, ... out of the surface of the SOI wafer 1 are detected; and the quality of the SOI wafer 1 is determined based on the detected dislocations 9, 9, .... COPYRIGHT: (C)2011,JPO&INPIT
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