| 摘要 |
PROBLEM TO BE SOLVED: To reduce a resistance in the vertical direction of a gate electrode structure. SOLUTION: The semiconductor device has: a semiconductor substrate 1; a gate insulating film 2 formed on the semiconductor substrate 1; a work function control layer 3 formed on the gate insulating film 2; a first silicide layer 4 formed on the work function control layer 3; a polysilicon gate electrode 5 formed on the first silicide layer 4; and a source region 6 and a drain region 7 so formed in the semiconductor substrate 1 as to sandwich a region in the semiconductor substrate 1 under the polysilicon gate electrode 5. COPYRIGHT: (C)2011,JPO&INPIT
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