AMORPHOUS OXIDE THIN FILM, THIN FILM TRANSISTOR COMPRISING SAME, AND PROCESS FOR PRODUCTION OF THE THIN FILM TRANSISTOR

摘要

A thin film transistor having an amorphous oxide thin film as an active layer, wherein the amorphous oxide thin film contains, as the main components, indium (In), oxygen (O), and a metal element (M) selected from the group consisting of silicon (Si), aluminum (Al), germanium (Ge), tantalum (Ta), magnesium (Mg) and titanium (Ti), and wherein the ratio of the number of atoms of M to the number of atoms of In in the amorphous oxide thin film is 0.1 to 0.4 inclusive and the carrier density in the amorphous oxide thin film is 1 × 1015 to 1 × 1019 cm-3 inclusive.