发明名称 METHOD FOR PRODUCING A PHOTOVOLTAIC CELL INCLUDING THE PREPARATION OF THE SURFACE OF A CRYSTALLINE SILICON SUBSTRATE
摘要 <p>The invention relates to a method for creating at least one photovoltaic cell that consecutively includes anisotropically etching a surface (1a) of a crystalline silicon substrate (1) and treating said surface (1a) by means of isotropic etching. Treatment by means of isotropic etching includes at least two consecutive operations that respectively involve forming a silicon oxide thin film (11), having a regulated mean thickness between 10 nm and 500 nm, and removing said thus-formed thin film. The operation that involves forming a silicon oxide thin film (11) on the surface (1a) of the substrate (1) is carried out by means of thermally activated dry oxidation. Such a method makes it possible to improve the surface condition of the surface (1a) of the substrate (1) once the latter is anisotropically etched.</p>
申请公布号 WO2011092401(A2) 申请公布日期 2011.08.04
申请号 WO2011FR00049 申请日期 2011.01.26
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;MORICEAU, HUBERT;MUR, PIERRE;RIBEYRON, PIERRE-JEAN 发明人 MORICEAU, HUBERT;MUR, PIERRE;RIBEYRON, PIERRE-JEAN
分类号 H01L31/20;H01L31/0236;H01L31/075 主分类号 H01L31/20
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