VERTICAL SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A vertical type semiconductor light emitting device and a manufacturing method thereof are provided to include a side surface of laminated structure as a growing surface for a semiconductor layer instead of a process surface by a laser or cutting device, thereby improving light extraction efficiency. CONSTITUTION: A first semiconductor layer(11) has a first conductivity. A first electrode(21) is electrically contacted to the first semiconductor layer. An active layer(15) creates light using recombination of an electron and hole. A second semiconductor layer(12) locates facing to the first semiconductor layer and first electrode from the active layer as a reference. The second semiconductor layer has a second conductivity which is different from the first conductivity. A second electrode(22) is electrically contacted to the second semiconductor layer. The first semiconductor layer, the active layer, the second semiconductor layer form a laminated structure. A side surface of the laminated structure is formed during growth.