发明名称 INFRARED DETECTION CIRCUIT, SENSOR DEVICE, AND ELECTRONIC INSTRUMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide an infrared detection circuit, a sensor device, electronic instrument, and the like, for detecting infrared rays with high sensitivity. <P>SOLUTION: An infrared detection circuit includes a charge transfer transistor TTR, that is disposed between a read node NR, at one end of an infrared detection element CF and a tank node NT to transfer electric charge from the infrared detection element CF to the tank node NT; a gate control circuit 20 for controlling the gate of the charge transfer transistor TTR; and a negative potential generation circuit 30 for setting the tank node NT at negative potential, when transfer an electric charge by the charge transfer transistor TTR. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011149932(A) 申请公布日期 2011.08.04
申请号 JP20100287147 申请日期 2010.12.24
申请人 SEIKO EPSON CORP 发明人 KOIDE YASUNORI
分类号 G01J1/42;G01J5/34 主分类号 G01J1/42
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