| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device of z new structure, capable of holding storage contents even in a situation without power supply, where the number of writing operations is not limited during a storage period. <P>SOLUTION: The semiconductor device includes a first transistor, including a first source electrode and a first drain electrode; a first channel formation region electrically connected to the first source electrode and the first drain electrode and using an oxide semiconductor material; a first gate insulating layer on the first channel formation region, having a first gate electrode on the first gate insulating layer; and a capacitor. In the semiconductor device, one of the first source electrode and the first drain electrode of the first transistor and one of electrodes of the capacitor are electrically connected to each other. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
