| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a structure for preventing a crack due to heat from occurring in the vicinity of an interface having appeared on a side face of a semiconductor device. <P>SOLUTION: A semiconductor device 1 includes a semiconductor substrate 11, projecting electrodes 23 formed on the semiconductor substrate 11, a sealing film 26 formed on the semiconductor substrate 11 excluding the projecting electrodes 23, and a frame part 24 formed on circumferential side faces on the semiconductor substrate 11. The frame part 24 is formed of a material of a linear expansion coefficient close to the linear expansion coefficient of the semiconductor substrate 11 relative to the linear expansion coefficient of the sealing film 26. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
