| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress a change of a film quality, which originates in a fluctuation of a temperature when a substrate is continuously treated. <P>SOLUTION: A method in one embodiment includes conducting reactive sputtering while adjusting a flow rate of a reactive gas according to the temperature of a structural member which faces to a sputtering space. Specifically, a temperature sensor 121 is provided on a shield 120, and the flow rate is adjusted according to the temperature. Thereby, even though a degassing amount of a film which has been deposited on the shield changes, the partial pressure of the reactive gas can be controlled to a predetermined pressure. A material to be used as a resistance change layer which constitutes ReRAM includes: a perovskite material such as PrCaMnO3 (PCMO), LaSrMnO3 (LSMO) and GdBaCoxOy (GBCO); and an oxide of a binary transition metal having a composition deviated from stoichiometry, such as nickel oxide (NiO) and vanadium oxide (V2O5). <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
