| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor laser element having a laser resonator which makes a low threshold current possible, and having a structure which makes an increase in oscillation yield possible, on a semipolar surface of a support base in which a c axis of a hexagonal group III nitride is tilted in the direction of an m axis. SOLUTION: First and second torn surfaces 27 and 29 which serve as laser resonators intersect an m-n surface. In a group III nitride semiconductor laser element 11, it is possible to use light emission of a band transition which makes a low threshold current possible, because a laser waveguide is extended in a direction of the crossing line of the m-n surface and a semipolar surface 17a. The first and second torn surfaces 27 and 29 are extended from an edge 13c of a first surface 13a to an edge 13d of a second surface 13b. The torn surfaces 27 and 29 are not formed by dry etching and are different from cleavage planes such as a c plane, an m plane, or an a plane. A shift angle AV which is formed by a waveguide vector LGV and a projection component VCP can fall within the range from -0.5 degree to +0.5 degree. COPYRIGHT: (C)2011,JPO&INPIT
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