发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A sinker layer is in contact with a first conductivity-type well and a second conductivity-type drift layer, respectively, and is separated from a first conductivity-type collector layer. A second conductivity-type diffusion layer (second second-conductivity-type high-concentration diffusion layer) is formed in the surface layer of the sinker layer. The second conductivity-type diffusion layer has a higher impurity concentration than that of the sinker layer. The second conductivity-type diffusion layer and the first conductivity-type collector layer are isolated from each other with an element isolation insulating film interposed therebetween.
申请公布号 US2011186907(A1) 申请公布日期 2011.08.04
申请号 US201113017687 申请日期 2011.01.31
申请人 RENESAS ELECTRONICS CORPORATION 发明人 FUJII HIROKI
分类号 H01L29/74;H01L21/332 主分类号 H01L29/74
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