PROTRUDING TSV TIPS FOR ENHANCED HEAT DISSIPATION FOR IC DEVICES
摘要
An integrated circuit device (100) includes a substrate (110) having a top surface including substrate pads (112), and a through-substrate via (115) die including a semiconductor substrate (105) including a top semiconductor surface (106) having active circuitry and a bottom surface (106). The top semiconductor surface (107) includes bonding connectors (109) that are coupled to the substrate pads on the top surface of the substrate. A plurality of through- substrate vias (TSVs) include an inner metal core (125) that extends from the top side semiconductor surface to protruding TSV tips (121) which extend out from the bottom surface. At least one of the plurality of TSVs is a dummy TSV (120) that has its protruding TSV tip exclusive of any electrically connection thereto and that provides additional surface area to enhance heat dissipation from the bottom side of the TSV die.
申请公布号
WO2011093956(A2)
申请公布日期
2011.08.04
申请号
WO2010US61033
申请日期
2010.12.17
申请人
TEXAS INSTRUMENTS INCORPORATED;TEXAS INSTRUMENTS JAPAN LIMITED;MAWATARI, KAZUAKI;AOYA, KENGO;UMEDA, YOSHIKATSU;WEST, JEFFREY, A.
发明人
MAWATARI, KAZUAKI;AOYA, KENGO;UMEDA, YOSHIKATSU;WEST, JEFFREY, A.