发明名称 |
METHOD FOR MANUFACTURING MULTI-COMPONENT OXIDE HETEROSTRUCTURES |
摘要 |
<p>Certain embodiments disclosed herein relate to the formation of multi-component oxide heterostructures (MCOH) using surface nucleation to pattern the atomic layer deposition (ALD) of perovskite material followed by patterned etch and metallization to produce ultra-high density MCOH nano-electronic devices. Applications include ultra-high density MCOH memory and logic, as well as electronic functionality based on single electrons, for example a novel flash memory cell Floating-Gate (FG) transistor with LaAlO3 as a gate tunneling dielectric. Other types of memoiy devices (DIMMS. DRAM, and DDR) made with patterned ALD Of LaAlO3 as a gate dielectric are also possible.</p> |
申请公布号 |
WO2010144730(A8) |
申请公布日期 |
2011.08.04 |
申请号 |
WO2010US38211 |
申请日期 |
2010.06.10 |
申请人 |
NEXGEN SEMI HOLDING, INC. |
发明人 |
BENNAHMIAS, MARK, JOSEPH;ZANI, MICHAEL, JOHN;SCOTT, JEFFREY, WINFIELD |
分类号 |
H01L49/00;C23C16/02;C23C16/40;C23C16/455 |
主分类号 |
H01L49/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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