| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion apparatus, the output power of which is increased by suppressing a leakage current, and to provide a method of manufacturing the photoelectric conversion apparatus. <P>SOLUTION: The photoelectric conversion apparatus includes a lower electrode layer, a first semiconductor layer that is provided on the lower electrode layer, a second semiconductor layer that is provided on the first semiconductor layer and has a conductivity type different from that of the first semiconductor layer, an upper electrode layer that is provided on the second semiconductor layer and includes an indium oxide-based material, and an intermediate conductive layer that is provided between the second semiconductor layer and the upper electrode layer, includes an indium oxide-based material, and has an electrical resistivity higher than that of the upper electrode layer. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
