SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which the manufacturing cost thereof is reduced and a short channel effect of a field effect transistor is suppressed. SOLUTION: The semiconductor device includes: a well region of a second conductivity type, the well region having a source region of a first conductivity type and a drain region of the first conductivity type that are selectively formed in a surface thereof; a control electrode to control a current path between the source region and the drain region; a first main electrode connected to the source region; and a second main electrode connected to the drain region. In a case where a position of the well region at an identical depth to a portion of the source region or the drain region with a maximum curvature is defined as the reference, a profile of an impurity concentration distribution of the second conductivity type in the depth direction of the well region has a peak of the impurity concentration distribution in a range of ±0.15 μm from the reference. COPYRIGHT: (C)2011,JPO&INPIT