发明名称 METHOD FOR MANUFATURING CAPACITOR WITH PILLAR TYPE STORAGENODE
摘要 PURPOSE: A manufacturing method of a capacitor equipped with a charge storage electrode of pillar type is provided to prevent seam by gap-filling through 2 times using different conductive layers when the charge storage electrode of pillar type are formed. CONSTITUTION: An insulating layer having open area in the top of a substrate(21) is formed. A first conductive layer(27) is formed on the insulating layer. A second conductive layer(28) gap-filling the open area is formed on the first conductive layer. A charge storage electrode of pillar type is formed by selectively eliminating the first conductive layer and the second conductive layer. The insulating layer is eliminated.
申请公布号 KR20110089028(A) 申请公布日期 2011.08.04
申请号 KR20100008819 申请日期 2010.01.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, JEONG YEOP;LEE, KEE JEUNG;DO, KWAN WOO;PARK, KYUNG WOONG
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
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