发明名称 |
METHOD FOR MANUFATURING CAPACITOR WITH PILLAR TYPE STORAGENODE |
摘要 |
PURPOSE: A manufacturing method of a capacitor equipped with a charge storage electrode of pillar type is provided to prevent seam by gap-filling through 2 times using different conductive layers when the charge storage electrode of pillar type are formed. CONSTITUTION: An insulating layer having open area in the top of a substrate(21) is formed. A first conductive layer(27) is formed on the insulating layer. A second conductive layer(28) gap-filling the open area is formed on the first conductive layer. A charge storage electrode of pillar type is formed by selectively eliminating the first conductive layer and the second conductive layer. The insulating layer is eliminated.
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申请公布号 |
KR20110089028(A) |
申请公布日期 |
2011.08.04 |
申请号 |
KR20100008819 |
申请日期 |
2010.01.29 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, JEONG YEOP;LEE, KEE JEUNG;DO, KWAN WOO;PARK, KYUNG WOONG |
分类号 |
H01L21/8242;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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