发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 Disclosed is a substrate processing apparatus for forming a coating film on a substrate, which includes; a nozzle having a slit-shaped ejection port for ejecting a coating solution onto the substrate, the ejection port being elongated in a width direction of the substrate; a relative movement mechanism configured to cause relative movement between the nozzle and the substrate to allow the substrate to be relatively scanned by the nozzle; and a first gas flow generating unit configured to generate a gas flow of an inert gas that flows, uniformly along a direction of the relative movement, at least within a zone on one side of the nozzle above an area of the substrate having been scanned by the nozzle.
申请公布号 US2011189400(A1) 申请公布日期 2011.08.04
申请号 US201113014963 申请日期 2011.01.27
申请人 TOKYO ELECTRON LIMITED 发明人 SHINYA HIROSHI
分类号 B05D3/04 主分类号 B05D3/04
代理机构 代理人
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