| 摘要 |
A method for fabricating a copper/indium/gallium/selenium solar cell by a wet process under non-vacuum condition is provided. In the method for fabricating a copper/indium/gallium/selenium solar cell by a wet process under non-vacuum condition, a substrate having a backside electrode layer is provided, and then a first transparent conduction oxide (TCO) layer, a copper/indium/gallium/selenium layer and a cadmium sulfide layer, a zinc oxide layer, and a second TCO layer are sequentially formed on the backside electrode layer by using a first TCO layer forming process, a copper/indium/gallium/selenium layer and a cadmium sulfide layer forming process, a zinc oxide layer forming process, and a second TCO layer forming process to form the copper/indium/gallium/selenium solar cell with a high conversion efficiency, wherein the first TCO layer forming process, the zinc oxide layer forming process, and the second TCO layer forming process respectively comprise a laser cutting process to individually perform laser cutting and scraping knife cutting for the work piece such that the segmented work pieces are formed for increasing the integration of process and the quality of production.
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