发明名称 REPLACEMENT GATE APPROACH BASED ON A REVERSE OFFSET SPACER APPLIED PRIOR TO WORK FUNCTION METAL DEPOSITION
摘要 In a replacement gate approach, a spacer may be formed in the gate opening after the removal of the placeholder material, thereby providing a superior cross-sectional shape upon forming any electrode metals in the gate opening. Moreover, the spacer may be used for reducing the gate length, while not requiring more complex gate patterning strategies.
申请公布号 US2011186915(A1) 申请公布日期 2011.08.04
申请号 US20100914570 申请日期 2010.10.28
申请人 SCHEIPER THILO;BEYER SVEN;GRIEBENOW UWE;HOENTSCHEL JAN 发明人 SCHEIPER THILO;BEYER SVEN;GRIEBENOW UWE;HOENTSCHEL JAN
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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