发明名称 METHOD FOR REDUCING PATTERN COLLAPSE IN HIGH ASPECT RATIO NANOSTRUCTURES
摘要 A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.
申请公布号 US2011189858(A1) 申请公布日期 2011.08.04
申请号 US20100697862 申请日期 2010.02.01
申请人 LAM RESEARCH CORPORATION 发明人 YASSERI AMIR A.;ZHU JI;YUN SEOKMIN;MUI DAVID S.L.;MIKHAYLICHENKO KATRINA
分类号 H01L21/30 主分类号 H01L21/30
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