| 摘要 |
<p>Disclosed is a bonded wafer production method which involves at least bonding a base wafer and a bond wafer with a chamfered periphery and thinning the aforementioned bond wafer. The thinning of the aforementioned bond wafer involves a first step in which the aforementioned bond wafer is surface-ground to a first prescribed thickness, a second step for removing the outer periphery of the aforementioned surface-ground bond wafer, and a third step for surface grinding the aforementioned bond wafer to a second prescribed thickness. By this means, the bonded wafer production method is capable of quickly producing bonded wafers without chipping or peeling on the outer periphery of a thinned bond wafer such as an SOI layer, without changing the shape of the base wafer and while suppressing a reduction in diameter of the bonded wafer insofar as possible.</p> |
