| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element having a pad electrode with a structure that can be preferably connected with both a translucent electrode on a p-type nitride semiconductor layer and an n-type nitride semiconductor layer. <P>SOLUTION: A nitride semiconductor element 10 is configured by laminating an n-type nitride semiconductor layer 2, an active layer 3, and a p-type nitride semiconductor layer 4 on a substrate 1. The nitride semiconductor element further has an n-side pad electrode 7n and a p-side electrode 5 that are electrically connected with the n-type and p-type nitride semiconductor layers 2 and 4, respectively. The p-side electrode 5 is composed of a translucent electrode 6 composed of a conductive oxide formed on the p-type nitride semiconductor layer 4, and a p-side pad electrode 7p formed in a partial region on the translucent electrode 6. In addition, the n-side pad electrode 7n and the p-side pad electrode 7p are configured by laminating a Cr layer 71a, a Pt layer 71b, a Ru layer 72, and Au layer 73 from the side contacting with the n-type nitride semiconductor layer 2 and the translucent electrode 6, respectively. The thickness of Cr layer 71a is equal to or larger than 1 nm and smaller than 9 nm. <P>COPYRIGHT: (C)2011,JPO&INPIT |
