FIELD EFFECT TRANSISTOR, ELECTRONIC DEVICE, AND FIELD EFFECT TRANSISTOR MANUFACTURING METHOD AND USING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor not broken regardless of application of overvoltage and overcurrent without over-increasing the chip area. SOLUTION: In the field effect transistor, a gate electrode 110, a drain electrode 109, a source electrode 108, and a protection diode (a protection diode electrode) 111 are disposed on a semiconductor layer. The drain electrode 109 is formed to surround a part or the entire of the surrounding of the protection diode 111, or a plurality of drain electrodes 109 are provided and formed such that the protection diode 111 is disposed between at least a pair of drain electrodes of the plurality of drain electrodes 109. COPYRIGHT: (C)2011,JPO&INPIT