发明名称 Ni-ALLOY SPUTTERING TARGET, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMI-CONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an Ni-alloy sputtering target which can be used for a long term, and a method for manufacturing the same. SOLUTION: In the Ni-alloy sputtering target consisting of an Ni-alloy having the average crystal grain size of≤1,000μm, the crystal orientation of the sputtering surface is random orientation, which is the crystal orientation in the center plane in the thickness direction of the target. The peak order is preferably unchanged even when the X-ray diffraction is performed for the powder thereof. Further, the thickness is preferably≥3 mm. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011149034(A) 申请公布日期 2011.08.04
申请号 JP20100003267 申请日期 2010.01.08
申请人 TOSHIBA CORP;TOSHIBA MATERIALS CO LTD 发明人 NAKAJIMA NOBUAKI
分类号 C23C14/34;C22C19/03;C22F1/00;C22F1/10;H01L21/28;H01L21/285;H01L29/417;H01L29/423;H01L29/49 主分类号 C23C14/34
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